the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all products and/or types are available in every country. please check with an nec electronics sales representative for availability and additional information. switching n-channel power mos fet data sheet mos field effect transistor 2sK4213 document no. d19565ej1v0ds00 (1st edition) date published december 2008 ns printed in japan 2008 description the 2sK4213 is n-channel mos fet device that features a lo w on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as dc/dc converter with synchronous rectifier. features ? low on-state resistance r ds(on)1 = 6.0 m max. (v gs = 10 v, i d = 30 a) r ds(on)2 = 9.5 m max. (v gs = 4.5 v, i d = 20 a) ? low total gate charge q g = 34 nc typ. (v dd = 15 v, v gs = 10 v, i d = 30 a) ? 4.5 v drive available ? avalanche capability ratings ordering information part number lead plating packing package 2sK4213-zk-e1-ay note 2sK4213-zk-e2-ay note pure sn (tin) tape 2500 p/reel to-252 (mp-3zk) typ. 0.27 g note pb-free (this product does not c ontain pb in external electrode). absolute maximum ratings (t a = 25 c) drain to source voltage (v gs = 0 v) v dss 25 v gate to source voltage (v ds = 0 v) v gss 20 v drain current (dc) (t c = 25 c) i d(dc) 64 a drain current (pulse) note1 i d(pulse) 192 a total power dissipation (t c = 25 c) p t1 45 w total power dissipation (t a = 25 c) p t2 1.0 w channel temperature t ch 150 c storage temperature t stg ? 55 to + 150 c single avalanche current note2 i as 21 a single avalanche energy note2 e as 44 mj notes 1. pw 10 s, duty cycle 1% 2. starting t ch = 25 c, v dd = 12.5 v, r g = 25 , v gs = 20 0 v, l = 0.1 mh (to-252)
data sheet d19565ej1v0ds 2 2sK4213 electrical characteristics (t a = 25 c) characteristics symbol test conditions min. typ. max. unit zero gate voltage drain current i dss v ds = 25 v, v gs = 0 v 10 a gate leakage current i gss v gs = 16 v, v ds = 0 v 100 na gate to source threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.5 3.0 v forward transfer admittance note | y fs | v ds = 5 v, i d = 16 a 12 27 s r ds(on)1 v gs = 10 v, i d = 30 a 4.2 6.0 m drain to source on-state resistance note r ds(on)2 v gs = 4.5 v, i d = 20 a 6.4 9.5 m input capacitance c iss v ds = 15 v, 1700 pf output capacitance c oss v gs = 0 v, 310 pf reverse transfer capacitance c rss f = 1 mhz 200 pf turn-on delay time t d(on) v dd = 15 v, i d = 30 a, 14 ns rise time t r v gs = 10 v, 14 ns turn-off delay time t d(off) r g = 3 49 ns fall time t f 10 ns total gate charge q g v dd = 15 v, 34 nc gate to source charge q gs v gs = 10 v, 5 nc gate to drain charge q gd i d = 30 a 10 nc body diode forward voltage note v f(s-d) i f = 30 a, v gs = 0 v 0.86 1.5 v reverse recovery time t rr i f = 30 a, v gs = 0 v, 29 ns reverse recovery charge q rr di/dt = 100 a/ s 20 nc note pulsed test circuit 1 avalanche capability r g = 25 50 pg. l v dd v gs = 20 0 v bv dss i as i d v ds starting t ch v dd d.u.t. test circuit 3 gate charge test circuit 2 switching time pg. r g 0 v gs d.u.t. r l v dd = 1 s duty cycle 1% pg. 50 d.u.t. r l v dd i g = 2 ma v gs wave form v ds wave form v gs v ds 10% 0 0 90% 90% 90% v gs v ds t on t off t d(on) t r t d(off) t f 10% 10%
data sheet d19565ej1v0ds 3 2sK4213 typical characteristics (t a = 25 c) derating factor of forward bias safe operating area forward bias safe operating area dt - percentage of rated power - % 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 t c - case temperature - c i d - drain current - a 0.1 1 10 100 1000 0.01 0.1 1 10 100 i d(pulse) i d(dc) t c = 25 c single pulse r d s ( o n ) l i m i t e d ( v g s = 1 i 0 v ) p w = 1 i 0 0 s dc 1 ms 10 ms p o w e r d i s s i p a t i o n l i m i t e d v ds - drain to source voltage - v transient thermal resistance vs. pulse width r th(t) - transient thermal resistance - c/w 0.01 0.1 1 10 100 1000 r th(ch-a) = 125 c/w single pulse r th(ch-c) = 2.78 c/w pw - pulse width - s forward transfer characterist ics gate to source threshold voltage vs. channel temperature i d - drain current - a 0 10 20 30 012345 v ds = 10 v pulsed t a = 125 c 75 c 25 c ?55 c v gs - gate to source voltage - v v gs(th) - gate to source threshold voltage - v 0 1 2 3 4 -75 -25 25 75 125 175 v ds = v gs i d = 250 a t ch - channel temperature - c 100 1 m 10 m 100 m 1 10 100 1000
data sheet d19565ej1v0ds 4 2sK4213 forward transfer admittance vs. drain current drain to source on-state resistance vs. drain current | y fs | - forward transfer admittance - s 0.1 1 10 100 0.1 1 10 100 v ds = 5 v pulsed 75 c 25 c ? 55 c t a = 150 c i d - drain current - a r ds(on) - drain to source on-state resistance - m 0 5 10 15 0.1 1 10 100 1000 pulsed 10 v v gs = 4.5 v i d - drain current - a drain to source on-state resistance vs. gate to source voltage drain to source on-state resistance vs. channel temperature r ds(on) - drain to source on-state resistance - m 0 5 10 15 0 5 10 15 20 i d = 30 a pulsed v gs - gate to source voltage - v r ds(on) - drain to source on-state resistance - m 0 2 4 6 8 10 -75 -25 25 75 125 175 pulsed 10 v, 30 a v gs = 4.5 v, i d = 20 a t ch - channel temperature - c capacitance vs. drain tosource voltage dynamic input/output characteristics c iss , c oss , c rss - capacitance - pf 100 1000 10000 0.1 1 10 100 v gs = 0 v f = 1 mhz c iss c oss c rss v ds - drain to source voltage - v v gs - gate to source voltage - v 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 i d = 30 a v dd = 5 v 15 v 20 v q g - gate charge - nc
data sheet d19565ej1v0ds 5 2sK4213 source to drain diode forward voltage i f - diode forward current - a 0.1 1 10 100 1000 0 0.5 1 1.5 pulsed v gs = 10 v 4.5 v 0 v v f(s-d) - source to drain voltage - v
data sheet d19565ej1v0ds 6 2sK4213 package drawings (unit: mm) to-252 (mp-3zk) 6.50.2 2.30.1 0.50.1 0.760.12 0 to 0.25 0.50.1 1.0 no plating no plating 5.1 typ. 1.0 typ. 6.10.2 0.51 min. 4.0 min. 0.8 10.4 max. (9.8 typ.) 4.3 min. 1 4 23 1.14 max. 2.3 2.3 1. gate 2. drain 3. source 4. fin (drain) equivalent circuit body diode source drain gate remark strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. steps must be taken to stop generation of st atic electricity as much as possible, and quickly dissipate it once, when it has occurred.
|
